BM193-TCDB-CE
One-Cell Li Battery Protectors
三菱伊柯丽斯General Description
The BM193-TCDB-CE is protector for lithium-ion and lithium polymer rechargeable battery with high accuracy voltage detection. It
can be used for protecting single cell
lithium-ion or/and lithium polymer battery packs from overcharge, overdischarge,
overcurrent and short circuit. The IC has
suitable protection delay functions and low power consumption property.跑车标志大全
Applications
Typical Application Circuits
P-
P+
Features
z Overcharge Detection Voltage Typ. 4.375V
Accuracy ±25mV (Ta=25℃) ±50mV (Ta=-30℃~80℃) z Overdischarge Detection Voltage
Typ. 2.500V Accuracy ±75mV (Ta=25℃) z Discharge
Overcurrent Detection Voltage Typ. 0.120V (V DD = 3.300V) Accuracy ±15mV (Ta=25℃)
z Short Circuit Detection Voltage
Typ. 0.800V (V DD = 3.300V) Accuracy ±150mV (Ta=25℃)
z Low Current Consumption Standard working current Typ. 4.0uA (V DD = 3.900V, Ta=25℃) With auto wake up
Typ. 1.3uA (V DD = 2.000V, Ta=25℃) z 0V charge function is allowed
z Auto Wake up function is allowed z Small Package DFNWB2.5*3.6-6L
z FET general characteristics
V DS =24V R SS(ON)<29 m Ω (V GS =3.9V,I D =1A) ESD Rating: 2000V HBM
Notes
R 1 and C 1 are to stabilize the supply voltage of the BM193-TCDB-CE . R 1 C 1 is hence regarded as the time constant for V DD pin. R 1 and R 2 can also be a part of current limit circuit for the BM193-TCDB-CE . Recommended values of these elements are as follows:
z R 1<1K Ω. A larger value of R 1 results in higher
detection voltage, introducing errors.北京汽车修理
z 1.5k Ω<R 2<4K Ω. A larger value of R 2 possibly
prevents resetting from overdischarge even with a
charger.
z R 1+ R 2>1.6K Ω. Smaller values may lead to power
consumption over the maximum dissipation rating of the BM193-TCDB-CE .
The requirement or resistors and capacitors and the value of constants should be decided depending upon the system function and characteristics.
Battery Pack
Lithium Ion Or Lithium Polymer Battery Cell Protection Circuit Board With BM193
Marking contents
B M193-X X X X-
C E东南汽车论坛
Symbol Meaning Description
XXXX The first X stands for Overcharge detection voltage (Vdet1),
The second X stands for Overdischarge detection voltage (Vdet2),
The third X stands for Discharge Overcurrent detection voltage (Vdet3),
The fourth X stands for versions.
Assigned from
AAAA to WWWW
CE Package
DFNWB2.5*3.6-6L Block Diagram
Pin Description
P1
P2
P3
P4P6P5P1P2P3
P4
P6
P5
Bottom View Top View
Pin Symbol Description
P1
S2 The source terminal of MOSFET switch for charge control
P2 V M Connected to charger’s negative pin P3 N C No Connection P4 V SS Ground P5 V DD Power supply P6 S1 The source terminal of MOSFET switch for discharge control P7
Drain
The common drain terminal of MOSFET, it should be floating
许可,不得复制,扩散!
Electrical Characteristics 1*
(Ta=25ºC unless otherwise specified)
Max.Unit
Min. Symbol Item Conditions
Typ. DETECTION VOLTAGE AND DELAY TIME
Vdet1 Overcharge Detection Voltage 4.350
4.375 4.400V
Vrel1 Release Voltage For Overcharge Detection 4.125
4.175 4.225V
Vdet2Overdischarge Detection Voltage 2.425 2.500 2.575V
Vrel2 Release Voltage For Overdischarge 2.800 2.900 3.000V
Vdet3 Discharge Overcurrent 1 Detection Voltage V DD = 3.300V 0.105 0.120 0.135V
Vdet4 Discharge Overcurrent 2 Detection Voltage V DD = 3.300V 0.300 0.400 0.500V Vshort Short Protection Voltage V DD = 3.300V 0.650 0.800 0.950V Vcha Charger Detection (Charge Overcurrent) -0.150 -0.120 -0.090V
V0cha 0V Battery Charge Starting Charger Voltage Applied for 0V battery
1.2 - - V
charge function
Vdet5 Charger Overvoltage Detection Voltage VDD = 3.600V 6 8 10 V Vrel5 Release Voltage for Charger Overvoltage VDD = 3.600V 5.5 7.5 9.5 V Tvdet1 Overcharge detection Delay Time V DD = 4.0V→4.5V 600 1200 1800 ms Tvrel1 Overcharge ReleaseDelay Time V DD = 4.5V→4.0V 10
25 40 ms Treset Overcharge Reset Delay Time V DD = 4.5V→4.0V→4.5V 8 23 38 ms Tvdet2 Overdischarge detection Delay Time V DD = 4.0V→2.0V 36 72 108 ms Tvrel2 Overdischarge Release Delay Time V DD = 2.0V→3.0V, V M = 0V 1.1 2.2 3.3 ms Tvdet3 Discharge Overcurrent 1 Detection Delay Time V DD =3.3V, V M = 0V→0.2V 5 10 15 ms
Tab Charge Overcurrent detection Delay Time V DD =3.3V, V M = 0V→-0.2V 5 10 15 ms Tvdet4 Discharge Overcurrent 2 Detection Delay Time V DD =3.3V, V M = 0V→0.5V0.55 1.1 1.65 ms Tshort Short Detection Delay Time V DD =3.3V, V M = 0V→1.2V210 420 630 us Tvrel3 Discharge Overcurrent Release Delay Time V DD =3.3V, V M = 0.2V→0 V 1.1 2.2 3.3 ms OUTPUT VOLTAGE AND V M INTERNAL RESISTANCE
R VMD Resistance between V M and V DD V DD=2.0V, V M
=0V 100
600 900 kΩ
R VMS Resistance between V M and V SS V DD=3.3V, V M
=1V 60
100 300 kΩOPERRATION VOLTAGE AND CURRENT CONSUMPTION
V DD Operating Input Voltage V DD-Vss 1.6
V DD8.0 V V M Operating Input Voltage V DD-V M 1.5韩国汽车品牌有哪些
烟台玻璃贴膜- 28 V
I DD Supply Current V DD = 3.9V, V M = 0V - 4.0 5.5 uA I STANDBY Standby Current V DD = 2.0V, V M =0V→2.0V- 1.3 2.5 uA
1* The Electrical parameters for this temperature range is guaranteed by design, not tested in production.
许可,不得复制,扩散!
Electrical Characteristics 1*
(Ta=-5~55℃ unless otherwise specified)
Typ.
Max.Unit Symbol Item Conditions
Min. DETECTION VOLTAGE AND DELAY TIME
Vdet1 Overcharge Detection Voltage 4.340
4.375 4.410V
Vrel1 Release Voltage For Overcharge Detection 4.115
4.175 4.235V
Vdet2Overdischarge Detection Voltage 2.425 2.500 2.575V
Vrel2 Release Voltage For Overdischarge 2.800 2.900 3.000V
Vdet3 Discharge Overcurrent 1 Detection Voltage V DD = 3.300V 0.102 0.120 0.138V
Vdet4 Discharge Overcurrent 2 Detection Voltage V DD = 3.300V 0.280 0.400 0.520V Vshort Short Protection Voltage V DD = 3.300V 0.600 0.800 1.000V Vcha Charger Detection (Charge Overcurrent) -0.155 -0.120 -0.085V
V0cha 0V Battery Charge Starting Charger Voltage Applied for 0V battery
1.2 - - V
charge function
Vdet5 Charger Overvoltage Detection Voltage V DD = 3.600V 6 8 11 V Vrel5 Release Voltage for Charger Overvoltage V DD = 3.600V 5.5 7.5 10.5 V Tvdet1 Overcharge detection Delay Time V DD = 4.0V→4.5V 540 1200 1860 ms Tvrel1 Overcharge ReleaseDelay Time V DD = 4.5V→4.0V 9 25 41 ms Treset Overcharge Reset Delay Time V DD = 4.5V→4.0V→4.5V 7 23 39 ms Tvdet2 Overdischarge detection Delay Time V DD = 4.0V→2.0V 32 72 112 ms Tvrel2 Overdischarge Release Delay Time V DD = 2.0V→3.0V, V M = 0V 1.0 2.2 3.4 ms Tvdet3 Discharge Overcurrent 1 Detection Delay Time V DD =3.3V, V M = 0V→0.2V 4.5 10 15.5 ms Tab Charge Overcurrent detection Delay Time V DD =3.3V, V M = 0V→-0.2V 4.5 10 15.5 ms Tvdet4 Discharge Overcurrent 2 Detection Delay Time V DD =3.3V, V M = 0V→0.5V0.5 1.1 1.7 ms Tshort Short Detection Delay Time V DD =3.3V, V M = 0V→1.2V189 420 651 us Tvrel3 Discharge Overcurrent Release Delay Time V DD =3.3V, V M = 0.2V→0 V 1.0 2.2 3.4 ms OUTPUT VOLTAGE AND V M INTERNAL RESISTANCE
R VMD Resistance between V M and V DD V DD=2.0V, V M
=0V 85
600 1100 kΩ
R VMS Resistance between V M and V SS V DD=3.3V, V M
=1V 50
100 350 kΩOPERRATION VOLTAGE AND CURRENT CONSUMPTION
V DD Operating Input Voltage V DD-Vss 1.6
V DD8.0 V V M Operating Input Voltage V DD-V M 1.5
- 28 V
I DD Supply Current V DD = 3.9V, V M = 0V - 4.0 5.8 uA I STANDBY Standby Current V DD = 2.0V, V M =0V→2.0V- 1.3 2.8 uA
1* The Electrical parameters for this temperature range is guaranteed by design, not tested in production.
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